منابع مشابه
Crystal Properties and Growth of Semiconductors
In studying solid state electronic devices we are interested primarily in the electrical behavior of solids. However, we shall see in later chapters that the transport of charge through a metal or a semiconductor depends not only on the properties of the electron but also on the arrangement of atoms in the solid. In the first chapter we shall discuss some of the physical properties of semicondu...
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news & views devices. Furthermore, separation and recombination of photoinduced electron– hole pairs at a heterojunction interface are primary mechanisms governing the operation of solar cells, photodetectors and light-emitting devices. Both Gong and collaborators and Duan and colleagues managed to electrically address the lateral heterojunctions and perform transport measurements to investigat...
متن کاملInterband tunneling in two-dimensional crystal semiconductors
Interband quantum tunneling of electrons in semiconductors is of intense recent interest as the underlying transport mechanism in tunneling field-effect transistors. Such transistors can potentially perform electronic switching with lower energy than their conventional counterparts. The recent emergence of two-dimensional (2D) semiconducting crystals provides an attractive material platform for...
متن کاملEFFECT OF SPIRAL DESIGN ON CRYSTAL ORIENTATION DURING SINGLE CRYSTAL GROWTH
Geometrical design of the spiral crystal selector can affect crystal orientation in the final single crystal structure. To achieve a better understanding of conditions associated with the onset of crystal orientation in a spiral crystal selector, temperature field was investigated using three-dimensional finite element method during the process. Different geometries of spiral crystal selec...
متن کاملInvestigation of Different Stages of Aluminum Fluoride Crystal Growth
Crystallization of Aluminum fluoride at atmospheric pressure has been considered. Structure, size and shape of crystals formed during the crystallization process have been investigated. By applying the direct analysis method for the existed aluminum in solution, the aluminum fluoride nucleation process has been detected as a concentration valley at the outset of crystallization process. The...
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ژورنال
عنوان ژورنال: Materia Japan
سال: 1994
ISSN: 1340-2625,1884-5843
DOI: 10.2320/materia.33.1029